Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method

The surface activated bonding method has been applied to bond the III-V compound semiconductor wafers and Si wafer directly at room temperature in ultra high vacuum. The procedure is as follows: the surfaces to be bonded are sputter-cleaned and activated by Ar fast atom beam irradiation and brought into contact under slight pressure. The GaAs and Si wafers bonded very well, without any macro defect being detected along the bonded interface. An amorphous intermediate layer of about 3 nm thick in most parts of the interface boundary direct bonding without any interlayer between the GaAs and Si wafers existed in a partially bonded interface by high resolution TEM.