Study on transparent and flexible memory with metal-oxide nanocrystals

被引：0

作者：

Lee, Dong Uk ^{[1
,2
]}

Kim, Seon Pil ^{[1
,2
]}

Lee, Hyo Jun ^{[1
,2
]}

Han, Dong Seok ^{[1
,2
]}

Kim, Eun Kyu ^{[1
,2
]}

You, Hee-Wook ^{[3
]}

Cho, Won-Ju ^{[3
]}

Kim, Young-Ho ^{[4
]}

机构：

[1] Hanyang Univ, Dept Phys, Seoul 133791, South Korea

[2] Hanyang Univ, Res Inst Nat Sci, Seoul 133791, South Korea

[3] Kwangwoon Univ, Dept Elect Mat Engineer, Seoul 139701, South Korea

[4] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

D O I：

10.1063/1.3666652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A memory device with the In2O3 nanocrystals embedded in biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer was fabricated, and its electrical and optical properties were evaluated. The In2O3 nanocrystals showed an irregular spherical shape with the average size and density of about 7 nm and 6x10(11) cm(-2), respectively. In the structure of BPDA-PDA polyimide/In2O3 nanocrystals/ZnO/ITO/sapphire, a current bistability by difference resistance appeared in the sweep voltage rage from -7 V to 7 V. Then, the transmittance efficiency of this was measured about 80 % between 440 nm to 800 nm by the ultraviolet-visible transmittance spectra.

引用

页数：2

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