High-brightness laser arrays integrated with a phase-shifter designed for single-lobe far-field pattern

被引：0

作者：

Liu, Lei ^{[1
]}

Zhang, Jianxin ^{[1
]}

Ma, Shaodong ^{[1
]}

Qi, Aiyi ^{[1
]}

Qu, Hongwei ^{[1
]}

Zhang, Yejin ^{[1
]}

Zheng, Wanhua ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-brightness 910 nm wavelength edge-emitting laser arrays integrated with a phase-shifter have been designed. Over 450 mW/facet with M-2 < 3 is achieved experimentally. Such devices show bright future for low cost and easy fabrication.

引用

页数：2

共 41 条

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