High-brightness laser arrays integrated with a phase-shifter designed for single-lobe far-field pattern

被引：0
|
作者：
Liu, Lei [1 ]
Zhang, Jianxin [1 ]
Ma, Shaodong [1 ]
Qi, Aiyi [1 ]
Qu, Hongwei [1 ]
Zhang, Yejin [1 ]
Zheng, Wanhua [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-brightness 910 nm wavelength edge-emitting laser arrays integrated with a phase-shifter have been designed. Over 450 mW/facet with M-2 < 3 is achieved experimentally. Such devices show bright future for low cost and easy fabrication.
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页数：2
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