Solution Processed MoO3 Interfacial Layer for Organic Photovoltaics Prepared by a Facile Synthesis Method

被引：296
|
作者：
Murase, Seiichiro [1 ,2 ]
Yang, Yang [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90025 USA
[2] Toray Industries Ltd, Elect & Imaging Mat Labs, Otsu, Shiga 5200842, Japan
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 18期
关键词：
MoO3; solution; anode buffer layer; organic photovoltaics; POLYMER SOLAR-CELLS; THIN-FILMS; EFFICIENCY; OXIDES;
D O I：
10.1002/adma.201104771
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
An MoO3 film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO3 anode buffer layer is comparable to that using a conventional PEDOT:PSS layer without annealing at an elevated temperature.
引用
收藏
页码：2459 / 2462
页数：4
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