A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals

被引：17
|
作者：
Shin, T. I.
Lee, H. J.
Song, W. Y.
Kim, Sang-Woo
Park, M. H.
Yang, C. W.
Yoon, D. H. [1 ]
机构：
[1] Sungkyunkwan Univ, Dept Adv Mat Engn, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, SAINT, Suwon 440746, South Korea
[3] Kuymoh Natl Inst Technol, Sch Adv Mat & Syst Engn, Gyeongbuk 730701, South Korea
来源：
NANOTECHNOLOGY | 2007年 / 18卷 / 34期
关键词：
D O I：
10.1088/0957-4484/18/34/345305
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A homojunction of single- crystalline beta-Ga2O3 nanowires and nanocrystals was realized. Ga2O3 nanowires were synthesized at about 850 - 950 degrees C using a mixture of Ga2O3 and graphite powder with vapor phase epitaxy. It was found that the beta-Ga2O3 nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of beta-Ga2O3 nanocrystals follows the growth direction of the main beta-Ga2O3 nanowires. The distance between neighboring atoms in beta-Ga2O3 nanowires was 0.522 nm, which is similar to the theoretical value for bulk beta-Ga2O3.
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页数：4
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