Fabrication of single-crystalline β-Ga2O3 nanowires and zigzag-shaped nanostructures

Monoclinic gallium oxide (beta-Ga2O3) nanowires and zigzag-shaped nanostructures were synthesized successfully by heat treating the pre-prepared GaN powder at 900 degrees C in dry nitrogen/oxygen atmosphere. The structures, morphologies, and compositions of the calcined products have been characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), and energy dispersive X-ray (EDX) analysis. The results revealed that the as-synthesized beta-Ga2O3 nanowires and zigzag-shaped nanostuctures were pure, with high crystallinities and lengths of up to tens of micrometers. Here, The formation of diameter-modulated zigzag beta-Ga2O3 nanostructures is reported for the first time. A possible growth mechanism for the formation of different morphologies of beta-Ga2O3 is proposed. Besides, the optical property of beta-Ga2O3 was observed in the photoluminescence (PL) spectra, which showed that the as-prepared product emits strong visible luminescence at 416 and 580 nm (lambda (ex) = 250 nm).