Separated CuInSe2 quantum dots on ZnO thin film by ICP-assisted magnetron sputtering

被引：2
|
作者：
Huang, S. Y. [1 ]
Xu, S.
Long, J. D.
Cheng, Q. J.
Xu, X. B.
Chu, J. B.
机构：
[1] E China Normal Univ, Nanotech Ctr, Dept Phys, Shanghai 200062, Peoples R China
[2] Nanyang Technol Univ, NIE, Plasma Source & Applicat Ctr, Singapore, Singapore
来源：
SURFACE REVIEW AND LETTERS | 2007年 / 14卷 / 02期
关键词：
CIS; quantum dots; ICP-assisted magnetron;
D O I：
10.1142/S0218625X07009293
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Uniformly hemispherical separated CuInSe2 (CIS) quantum dots (QDs) were fabricated by low-frequency inductivity coupled plasma (LF-ICP) assisted radio-frequency (RF) magnetron sputtering technique from a ternary compound target on Si ( 100) and glass substrate with ZnO film serving as buffer layer. The average lateral size and densities of the QDs could be controlled by appropriate deposition parameters. The distribution scope of diameters was from 40 to 120 nm, density was from 4.5E9 to 2.1E11/cm(2). Field-emission scanning electron microscope (FE-SEM) and energy-dispersive X-ray (EDX) spectrometer were adopted to measure the properties of CIS QDs.
引用
收藏
页码：225 / 228
页数：4
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