Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots

被引：8

作者：

Xu, Zhangcheng ^{[1
,2
]}

Zhang, Yating ^{[1
,2
]}

Tackeuchi, Atsushi ^{[3
]}

Horikoshi, Yoshiji ^{[3
]}

Hvam, Jorn M. ^{[4
,5
]}

机构：

[1] Nankai Univ, Nanophoton Grp, Key Lab Weak Light Nonlinear Photon Mat MOE, TEDA Coll, Tianjin 300457, Peoples R China

[2] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[3] Waseda Univ, Sch Sci & Engn, Sinjuku Ku, Tokyo 1698555, Japan

[4] Tech Univ Denmark, Dept Commun Opt & Mat, DK-2800 Lyngby, Denmark

[5] Tech Univ Denmark, Nano DTU, DK-2800 Lyngby, Denmark

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2839312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The exciton radiative lifetime in submonolayer (SML) InGaAs/GaAs quantum dots (QDs) grown at 500 degrees C was measured by using time-resolved photoluminescence from 10 to 260 K. The radiative lifetime is around 90 ps and is independent of temperature below 50 K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20-30 nm in diameter and embedded within the lateral InGaAs QW. (C) 2008 American Institute of Physics.

引用

页数：3

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