Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots

被引：8
|
作者：
Xu, Zhangcheng [1 ,2 ]
Zhang, Yating [1 ,2 ]
Tackeuchi, Atsushi [3 ]
Horikoshi, Yoshiji [3 ]
Hvam, Jorn M. [4 ,5 ]
机构：
[1] Nankai Univ, Nanophoton Grp, Key Lab Weak Light Nonlinear Photon Mat MOE, TEDA Coll, Tianjin 300457, Peoples R China
[2] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[3] Waseda Univ, Sch Sci & Engn, Sinjuku Ku, Tokyo 1698555, Japan
[4] Tech Univ Denmark, Dept Commun Opt & Mat, DK-2800 Lyngby, Denmark
[5] Tech Univ Denmark, Nano DTU, DK-2800 Lyngby, Denmark
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2839312
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The exciton radiative lifetime in submonolayer (SML) InGaAs/GaAs quantum dots (QDs) grown at 500 degrees C was measured by using time-resolved photoluminescence from 10 to 260 K. The radiative lifetime is around 90 ps and is independent of temperature below 50 K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20-30 nm in diameter and embedded within the lateral InGaAs QW. (C) 2008 American Institute of Physics.
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页数：3
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