Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate

被引：4

作者：

Hu Bo ^{[1
,2
]}

He Wei ^{[1
,2
]}

Ye Jun ^{[1
,2
,3
]}

Tang Jin ^{[1
,2
]}

Ahmad, Syed Sheraz ^{[1
,2
]}

Zhang Xiang-Qun ^{[1
,2
]}

Cheng Zhao-Hua ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, State Key Lab Magnetism, Inst Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[3] Beihang Univ, Dept Phys, Beijing 100191, Peoples R China

来源：

CHINESE PHYSICS B | 2015年 / 24卷 / 01期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

magnetic anisotropy; CoSi2 buffer layers; four-fold symmetry; FE; ANISOTROPY; REVERSAL;

D O I：

10.1088/1674-1056/24/1/017502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of CoSi2 buffer layers were grown on Si (001) substrates. In order to investigate morphology, structure, and magnetic properties of films, scanning tunneling microscope (STM), low energy electron diffraction (LEED), high resolution transmission electron microscopy (HRTEM), and surface magneto-optical Kerr effect (SMOKE) were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of CoSi2 buffer layers. Few CoSi2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic (001) films.

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页数：5

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