AlN-to-Metal Direct Bonding Process Utilizing Sintering of Ag Nanoparticles Derived from the Reduction of Ag2O

被引:15
|
作者
Motoyama, Keita [1 ]
Matsuda, Tomoki [1 ]
Sano, Tomokazu [1 ]
Hirose, Akio [1 ]
机构
[1] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan
关键词
Sintering bonding; transmission electron microscopy (TEM); aluminum nitride; interface structure; thin films; CERAMICS; SURFACE;
D O I
10.1007/s11664-018-6504-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Bonding between AlN and metals conventionally requires a surface modification process at high temperature such as metallization. The AlN-to-metal direct bonding process by sintering of Ag nanoparticles derived from in situ reduction of Ag2O microparticles mixed with diethylene glycol is examined Bonding was conducted at 300-500 degrees C after a preheating process at 100 degrees C, and the shear strength exceeded 20 MPa for the joint bonded at 500 degrees C. The role of preheating in the direct bonding of AlN and Ag was identified. The Ag nanoparticles generated during preheating at 100 degrees C cover the AlN surface, and they are converted into a thin Ag film. The thin film promotes the formation of a bonding layer, owing to the effective adhesion of the sintered Ag to the film, and contributes to the bonding of Ag and AlN. No interfacial reaction layer is observed. The same bonding process can be applied to other ceramics with poor wettability.
引用
收藏
页码:5780 / 5787
页数:8
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