Investigation of acoustostimulated change of the electrical and photoelectrical properties of CdxHg1-xTe (x=0.2) crystals

被引：0

作者：

Olikh, YM ^{[1
]}

Savkina, RK ^{[1
]}

Vlasenko, AI ^{[1
]}

机构：

[1] Inst Semicond Phys, UA-252650 Kiev, Ukraine

来源：

INTERNATIONAL CONFERENCE ON OPTICAL DIAGNOSIS OF MATERIALS AND DEVICES FOR OPTO-, MICRO-, AND QUANTUM ELECTRONICS 1997 | 1998年 / 3359卷

关键词：

ultrasound treatment; structural perfection; dislocation; low angle boundary; life time; noise level;

D O I：

10.1117/12.306218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this report a review of numerous experimental investigations of electrophysical, photoelectrical and structural CdxHg1-x Te crystals properties changes as result of ultrasound treatment is presented.Influence of peculiarities of ultrasound treatment effect such as dependence on initial crystal physical parameters and ultrasound treatment characteristics (frequency, intensity) are analyzed.

引用

页码：232 / 235

页数：4

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