Deposition of Cd1-xZnxS (0 ≤ x ≤ 1) alloys by photochemical deposition

被引：18
|
作者：
Gunasekaran, M [1 ]
Ichimura, M [1 ]
机构：
[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Nagoya, Aichi 4668555, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 10期
关键词：
semiconductor; cadmium zinc sulfide; photochemical deposition; Raman studies; X-ray diffraction;
D O I：
10.1143/JJAP.44.7345
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cd1-xZnxS alloys were successfully deposited on indium-tin oxide (ITO)-coated glass substrates from an aqueous solution containing Cd2+, Zn2+ and S2O32- ions by photochemical deposition (PCD). The concentrations of Cd2+ and Zn2+ ions were varied to obtain the entire range of compositions from x = 0 to 1. Raman scattering studies were carried out for the as-deposited and annealed films. The alloy composition x was determined from the longitudinal optical phonon frequency observed from Raman spectroscopy. The composition of the alloy was also calculated by X-ray diffraction analysis and compared with the composition calculated from Raman spectra.
引用
收藏
页码：7345 / 7350
页数：6
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