Electron transport in heterostructures AlGaN/GaN doped with silicon

被引：0
|
作者：
Latyshev, AN [1 ]
Antonova, IV [1 ]
机构：
[1] Novosibirsk State Tech Univ, Novosibirsk, Russia
来源：
EDM 2005: International Workshop and Tutorials on Electron Devices and Materials, Proceedings | 2005年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：39 / 40
页数：2
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