Ab initio study of the effects of Ag/Mn doping on the electronic structure of LiFePO4
被引:13
|
作者:
Hou XianHua
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机构:
S China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R ChinaS China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R China
Hou XianHua
[1
]
Hu SheJun
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机构:
S China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R China
Wuyi Univ, Dept Math & Phys, Jiangmen 529020, Peoples R ChinaS China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R China
Hu SheJun
[1
,2
]
Li WeiShan
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机构:
S China Normal Univ, Sch Chem & Environm, Guangzhou 510006, Peoples R ChinaS China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R China
Li WeiShan
[3
]
Zhao LingZhi
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机构:
S China Normal Univ, Sch Chem & Environm, Guangzhou 510006, Peoples R ChinaS China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R China
Zhao LingZhi
[3
]
Ru Qiang
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S China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R ChinaS China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R China
Ru Qiang
[1
]
Yu HongWen
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S China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R ChinaS China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R China
Yu HongWen
[1
]
Huang ZhaoWen
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S China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R ChinaS China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R China
Huang ZhaoWen
[1
]
机构:
[1] S China Normal Univ, Sch Phys & Telecommun Engn, Guangzhou 510006, Peoples R China
[2] Wuyi Univ, Dept Math & Phys, Jiangmen 529020, Peoples R China
[3] S China Normal Univ, Sch Chem & Environm, Guangzhou 510006, Peoples R China
lithium ion battery;
LiFePO4;
first-principle;
electronic structure;
conductivity;
D O I:
10.1007/s11434-008-0091-1
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
Based on density functional theory (DFT) of the first-principle for the cathode materials of lithium ion battery, the electronic structures of Li(Fe1-xMex)PO4 (Me = Ag/Mn, x = 0-0.40) are calculated by plane wave pseudo-potential method using Cambridge serial total energy package (CASTEP) program. The calculated results show that the Fermi level of mixed atoms Fe1-xAgx moves into its conduction bands (CBs) due to the Ag doping. The Li(Fe1-xAgx)PO4 system displays the periodic direct semiconductor characteristic with the increase of Ag-doped concentration. However, for Fe1-xMnx mixed atoms, the Fermi level is pined at the bottom of conduction bands (CBs), which is ascribed to the interaction between Mn(3d) electrons and Fe(4s) electrons. The intensity of the partial density of states (PDOS) near the bottom of CBs becomes stronger with the increase of Mn-doped concentration. The Fermi energy of the Li(Fe1-xMnx)PO4 reaches maximum at x = 0.25, which is consistent with the experimental value of x = 0.20. The whole conduction property of Mn-doped LiFePO4 is superior to that of Ag-doped LiFePO4 cathode material, but the structural stability is reverse.
机构:
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Hu, Jiezi
Xie, Jian
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机构:
Department of Chemistry, Mie University, 1577, Kurimamachiyacho, Tsu, Mie 514-8507, JapanState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Xie, Jian
Zhao, Xinbing
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机构:
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Zhao, Xinbing
Yu, Hongming
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h-index: 0
机构:
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Yu, Hongming
Zhou, Xin
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机构:
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Zhou, Xin
Cao, Gaoshao
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机构:
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Cao, Gaoshao
Tu, Jiangping
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机构:
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Tu, Jiangping
Journal of Materials Science and Technology,
2009,
25
(03):
: 405
-
409
机构:
Seoul Natl Univ, Dept Mech & Aerosp Engn, WCU Program Multiscale Mech Design, Seoul 151742, South Korea
Georgia Inst Technol, George W Woodruff Sch Mech Engn, Sch Mat Sci & Engn, Atlanta, GA 30332 USASeoul Natl Univ, Dept Mech & Aerosp Engn, WCU Program Multiscale Mech Design, Seoul 151742, South Korea
Jung, Jongboo
Cho, Maenghyo
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机构:
Seoul Natl Univ, Dept Mech & Aerosp Engn, WCU Program Multiscale Mech Design, Seoul 151742, South KoreaSeoul Natl Univ, Dept Mech & Aerosp Engn, WCU Program Multiscale Mech Design, Seoul 151742, South Korea
Cho, Maenghyo
Zhou, Min
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机构:
Seoul Natl Univ, Dept Mech & Aerosp Engn, WCU Program Multiscale Mech Design, Seoul 151742, South Korea
Georgia Inst Technol, George W Woodruff Sch Mech Engn, Sch Mat Sci & Engn, Atlanta, GA 30332 USASeoul Natl Univ, Dept Mech & Aerosp Engn, WCU Program Multiscale Mech Design, Seoul 151742, South Korea