Photoluminescence properties of thermal SiO2 films implanted by silicon and nitrogen ions

被引：6
|
作者：
Zhao, J
Yu, YH
Mao, DS
Lin, ZX
Jiang, BY
Yang, GQ
Liu, XH
Zou, SC
机构：
[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Met, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期
基金：
中国国家自然科学基金;
关键词：
photoluminescence; ion implantation; SiO2; films; light-emitting materials;
D O I：
10.1016/S0168-583X(98)00692-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Intense UV-visible photoluminescence (PL) was observed at room temperature from thermal SiO2 films implanted by Si and N ions. There were two PL bands at similar to 330 and similar to 660 nm shown in the as-implanted sample, while another band at similar to 430 nm was observed apart from the other two bands. No shifts were observed in the PL spectra with increasing annealing temperature. The annealing temperature dependences of N distribution, PL intensity and electron spin resonance (ESR) signals were also measured. It is found that the PL is related to the N in the films. The PL is suggested to originate from complex of Si, N and . (C) 1999 Elsevier Science B.V. All lights reserved.
引用
收藏
页码：1002 / 1006
页数：5
相关论文
共 50 条
  • [21] Effects of thermal annealing on photoluminescence of Si+/C+ implanted SiO2 films
    Chen, Yin-Yu
    Chao, Der-Sheng
    Tsai, Hsu-Sheng
    Liang, Jenq-Horng
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 372 : 114 - 118
  • [22] Influence of thermal annealing on silicon negative ion implanted SiO2 thin films
    Vishwakarma, S. B.
    Dubey, S. K.
    Dubey, R. L.
    Sulania, I.
    Kanjilal, D.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2024, 546
  • [23] Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions
    Tyschenko, I. E.
    Voelskow, M.
    Si, Zh.
    Popov, V. P.
    SEMICONDUCTORS, 2021, 55 (03) : 289 - 295
  • [24] Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions
    I. E. Tyschenko
    M. Voelskow
    Zh. Si
    V. P. Popov
    Semiconductors, 2021, 55 : 289 - 295
  • [25] Annealing effects on 100 keV silicon negative ions implanted SiO2 thin films
    Vishwakarma, S. B.
    Dubey, S. K.
    Dubey, R. L.
    Yadav, A.
    Sulania, I.
    Kanjilal, D.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2024,
  • [26] Visible photoluminescence in thermally annealed Bi implanted SiO2 films
    Komatsu, M
    Oyoshi, K
    Hishita, S
    Matsuishi, K
    Onari, S
    Arai, T
    MATERIALS CHEMISTRY AND PHYSICS, 1998, 54 (1-3) : 286 - 288
  • [27] Near infrared photoluminescence from Yb,Al Co-implanted SiO2 films on silicon
    Zhang Jian-Guo
    Wang Xiao-Xin
    Cheng Bu-Wen
    Yu Jin-Zhong
    Wang Qi-Ming
    CHINESE PHYSICS LETTERS, 2006, 23 (08) : 2183 - 2186
  • [28] Silicon nanoparticles embedded in SiO2 films with visible photoluminescence
    Makimura, T
    Kunii, Y
    Ono, N
    Murakami, K
    APPLIED SURFACE SCIENCE, 1998, 127 : 388 - 392
  • [29] Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2 films
    Seol, KS
    Ohki, Y
    Nishikawa, H
    Takiyama, M
    Hama, Y
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (11) : 6444 - 6447
  • [30] Tuned photoluminescence from Si+-implanted SiO2 films with rapid and conventional thermal annealing
    Tsai, Jen-Hwan
    VACUUM, 2012, 86 (12) : 1983 - 1987
12345