Highly integrated InP HBT optical receivers

被引:12
|
作者
Yung, M [1 ]
Jensen, J
Walden, R
Rodwell, M
Raghavan, G
Elliott, K
Stanchina, W
机构
[1] HRL Labs, Malibu, CA 90265 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
heterojunction bipolar transistor; indium phosphide; optical receiver; optoelectronic integrated circuit;
D O I
10.1109/4.743780
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents two highly integrated receiver circuits fabricated in InP heterojunction bipolar transistor (HBT) technology operating at up to 2.5 and 7.5 Gb/s, respectively, The first IC is a generic digital receiver circuit with CMOS-compatible outputs. It integrates monolithically an automatic-gain-control amplifier, a digital clock and data recovery circuit, and a 1 : 8 demultiplexer, and consumes an extremely low 340 mW of power at 3.3 V, including output buffers. It can realize a full optical receiver when connected to a photo detector/preamplifier front end. The second circuit is a complete multirate optical receiver application-specific integrated circuit (ASIC) that integrates a photo diode, a transimpedance amplifier, a limiting amplifier, a digital clock and data recovery circuit, a 1 : 10 demultiplexer, and the asynchronous-transfer-mode-compatible word synchronization logic. It is the most functionally complex InP HBT optoelectronic integrated circuit reported to date, A custom package has also been developed for this ASIC.
引用
收藏
页码:219 / 227
页数:9
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