Pressure-induced changes in the electron density distribution in α-Ge near the α-β transition

被引:16
|
作者
Li, Rui [1 ,2 ,3 ]
Liu, Jing [1 ]
Bai, Ligang [2 ]
Tse, John S. [4 ]
Shen, Guoyin [2 ]
机构
[1] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
[2] Carnegie Inst Sci, HPCAT Geophys Lab, Argonne, IL 60439 USA
[3] Chinese Acad Sci, Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada
关键词
MAXIMUM-ENTROPY METHOD; X-RAY-SCATTERING; PHASE-TRANSITION; GROUP-IV; III-V; GERMANIUM; SILICON; DIAMOND; CRYSTALS; SPECTRA;
D O I
10.1063/1.4929368
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electron density distributions in alpha-Ge have been determined under high pressure using maximum entropy method with structure factors obtained from single crystal synchrotron x-ray diffraction in a diamond anvil cell. The results show that the sp(3) bonding is enhanced with increasing pressure up to 7.7(1) GPa. At higher pressures but below the alpha-beta transition pressure of 11.0(1) GPa, the sp(3)-like electron distribution progressively weakens with a concomitant increase of d-orbitals hybridization. The participation of d-orbitals in the electronic structure is supported by Ge K beta(2) (4p-1s) x-ray emission spectroscopy measurements showing the reduction of 4s character in the valence band at pressures far below the alpha-beta transition. The gradual increase of d-orbitals in the valence level in the stability field of alpha-Ge is directly related to the eventual structural transition. (C) 2015 AIP Publishing LLC.
引用
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页数:5
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