Pressure and temperature tuning of red laser diodes towards yellow and green

被引：0
|
作者：
Bohdan, Roland [1 ]
Yvonyak, Yurij [1 ]
Mrozowicz, Milan [1 ]
Trzeciakowski, Witold [1 ]
机构：
[1] Inst High Pressure Phys, PL-01142 Warsaw, Poland
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 08期
关键词：
leakage current; pressure tuning; threshold current; yellow laser diode; ALGAINP;
D O I：
10.1002/pssa.201084085
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two InGaP/AlGaInP red laser diodes are studied at pressures up to 16 kbar and at temperatures down to 80 K. Emission wavelengths below 570 nm have been obtained, with low thresholds and high efficiencies. Pressure dependence of threshold currents is very different for the two lasers indicating that electron leakage occurs predominantly to L minima in one laser and to X minima in another laser. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1841 / 1844
页数：4
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