Structure and properties of CeN thin films deposited in arc discharge

CeN thin films were deposited at 573 K by reactive are ion plating sustained by electron beam evaporation. Optical emission observation revealed that Ce vapor are discharge in nitrogen atmosphere was very localized and the relative emission intensity of Ce+ to atomic Ce was proportional to the are current, whereas nitrogen gas became less excited with the increasing are current. The 111 orientation of CeN films was developed with the increasing are current CeN indicated p-type electrical conductivity and showed paramagnetic properties at 10 K. The carrier concentration in the films increased after exposure to the air which suggested the existence of Ce4+ state in CeN film. The CeN film with a density of 7.82 g/cm(3) showed higher hardness than single crystalline Si wafer. (C) 1998 Elsevier Science Ltd. All rights reserved.