We study a two-dimensional system of spin-polarized fermions on the kagome lattice at filling fraction f = 1/3 interacting through a nearest-neighbor interaction V. Above a critical interaction strength V(c) a charge-density wave with a broken Z(3) symmetry is stabilized. Using the unrestricted mean-field approximation, we present several arguments showing that elementary topological point defects in the order parameter bind a fractional charge. Our analysis makes use of two appealing properties of the model: (i) For weak interaction, the low-energy degrees of freedom are described by Dirac fermions coupled to a complex-valued mass field (order parameter). (ii) The nearest-neighbor interaction is geometrically frustrated at filling f = 1/3. Both properties offer a route to fractionalization and yield a consistent value +/- 1/2 for the fractional charge as long as the symmetry between the up and the down triangles of the kagome lattice is preserved. If this symmetry is violated, the value of the bound charge varies continuously with the strength of the symmetry-breaking term in the model. In addition, we have numerically computed the confining potential between two fractionally charged defects. We find that it grows linearly at large distances but can show a minimum at a finite separation for intermediate interactions. This indicates that the polaron state, formed upon doping the charge-density wave, can be viewed as a bound state of two defects.
机构:
Sun Yat Sen Univ, Ctr Neutron Sci & Technol, Sch Phys, State Key Lab Optoelect Mat & Technol,Guangdong Pr, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, Ctr Neutron Sci & Technol, Sch Phys, State Key Lab Optoelect Mat & Technol,Guangdong Pr, Guangzhou 510275, Peoples R China
Zhang, Meng-Han
Yao, Dao-Xin
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Sun Yat Sen Univ, Ctr Neutron Sci & Technol, Sch Phys, State Key Lab Optoelect Mat & Technol,Guangdong Pr, Guangzhou 510275, Peoples R China
Int Quantum Acad, Shenzhen 518048, Peoples R ChinaSun Yat Sen Univ, Ctr Neutron Sci & Technol, Sch Phys, State Key Lab Optoelect Mat & Technol,Guangdong Pr, Guangzhou 510275, Peoples R China
机构:
Southwest Univ, Chongqing Key Lab Micro & Nano Struct Optoelect, Chongqing 400715, Peoples R China
Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R ChinaSouthwest Univ, Chongqing Key Lab Micro & Nano Struct Optoelect, Chongqing 400715, Peoples R China
Wei, Yu-Hao
Liu, Hao-Dong
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机构:
Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
Spallat Neutron Source Sci Ctr, Dongguan 523803, Peoples R ChinaSouthwest Univ, Chongqing Key Lab Micro & Nano Struct Optoelect, Chongqing 400715, Peoples R China
Liu, Hao-Dong
Ma, Da-Shuai
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机构:
Chongqing Univ, Inst Struct & Funct, Chongqing 400044, Peoples R China
Chongqing Univ, Dept Phys, Chongqing 400044, Peoples R China
Chongqing Univ, Chongqing Key Lab Strongly Coupled Phys, Chongqing 400044, Peoples R China
Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 400044, Peoples R ChinaSouthwest Univ, Chongqing Key Lab Micro & Nano Struct Optoelect, Chongqing 400715, Peoples R China
Ma, Da-Shuai
Yuan, Hong-Kuan
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Southwest Univ, Chongqing Key Lab Micro & Nano Struct Optoelect, Chongqing 400715, Peoples R China
Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R ChinaSouthwest Univ, Chongqing Key Lab Micro & Nano Struct Optoelect, Chongqing 400715, Peoples R China
Yuan, Hong-Kuan
Wang, Bao-Tian
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Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
Spallat Neutron Source Sci Ctr, Dongguan 523803, Peoples R ChinaSouthwest Univ, Chongqing Key Lab Micro & Nano Struct Optoelect, Chongqing 400715, Peoples R China
Wang, Bao-Tian
Kuang, Min-Quan
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Southwest Univ, Chongqing Key Lab Micro & Nano Struct Optoelect, Chongqing 400715, Peoples R China
Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R ChinaSouthwest Univ, Chongqing Key Lab Micro & Nano Struct Optoelect, Chongqing 400715, Peoples R China
机构:
MIT, Dept Phys, Cambridge, MA 02139 USA
NIST Ctr Neutron Res, Gaithersburg, MD 20899 USAMIT, Dept Phys, Cambridge, MA 02139 USA
Chisnell, R.
Helton, J. S.
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NIST Ctr Neutron Res, Gaithersburg, MD 20899 USAMIT, Dept Phys, Cambridge, MA 02139 USA
Helton, J. S.
Freedman, D. E.
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机构:
MIT, Dept Chem, Cambridge, MA 02139 USA
Northwestern Univ, Dept Chem, Evanston, IL 60208 USAMIT, Dept Phys, Cambridge, MA 02139 USA
Freedman, D. E.
Singh, D. K.
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Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USAMIT, Dept Phys, Cambridge, MA 02139 USA
Singh, D. K.
Bewley, R. I.
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机构:
Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, EnglandMIT, Dept Phys, Cambridge, MA 02139 USA
Bewley, R. I.
Nocera, D. G.
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机构:
MIT, Dept Chem, Cambridge, MA 02139 USA
Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USAMIT, Dept Phys, Cambridge, MA 02139 USA
Nocera, D. G.
Lee, Y. S.
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MIT, Dept Phys, Cambridge, MA 02139 USA
Stanford Univ, Dep Appl Phys, Stanford, CA 94305 USA
Stanford Univ, Dept Photon Sci, Stanford, CA 94305 USA
SLAC Natl Accelerator Lab, Stanford, CA 94305 USAMIT, Dept Phys, Cambridge, MA 02139 USA