Dislocations in silicon as a tool to be used in optics, electronics and biology

被引：8
|
作者：
Kittler, M. [1 ,2 ]
Reiche, M. [3 ]
Arguirov, T. [1 ,2 ]
Mchedlidze, T. [2 ]
Seifert, W. [1 ,2 ]
Vyvenko, O. F. [2 ]
Wilhelm, T. [4 ]
Yu, X. [1 ,2 ]
机构：
[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
[2] IHP, BTU Joint Lab, D-03046 Cottbus, Germany
[3] MPI Mikrostrukturphysik, D-06120 Halle, Germany
[4] St Petersburg State Univ, St Petersburg 198904, Russia
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII | 2008年 / 131-133卷
关键词：
dislocations; Si; D-bands; stark effect; conductance; biomolecules;
D O I：
10.4028/www.scientific.net/SSP.131-133.289
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：289 / 292
页数：4
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