Effect of the randomness on the electron transport in normal metal/insulator/conventional superconductor junctions

被引:0
|
作者
Tanaka, Y [1 ]
Kitaura, N
Itoh, H
Inoue, J
Golubov, A
Yoshida, N
Kashiwaya, S
机构
[1] Nagoya Univ, Dept Appl Phys, CREST, Nagoya, Aichi 4648603, Japan
[2] Univ Twente, Dept Appl Phys, NL-7500 AE Enschede, Netherlands
[3] Chalmers Univ Technol, Sch Phys & Engn Phys, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden
[4] Univ Gothenburg, S-41296 Gothenburg, Sweden
[5] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
关键词
D O I
10.1016/S0921-4534(03)01096-7
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tunneling conductance at zero voltage in diffusive normal metal (DN)/insulator/s-wave superconductor junctions is calculated for various situations based on the quasiclassical (QC) theory. In QC theory, the generalized boundary condition introduced by Nazarov [Superlattices and Microstructures 25 1221 (1999)] is applied, where ballistic theory by Blonder Tinkham and Klapwijk and diffusive theory by Volkov Zaitsev and Klapwijk based on the boundary condition by Kupriyanov and Lukichev are naturally reproduced. It is shown that with the increase of the magnitude of resistance of DN (R-D), normalized tunneling conductance is enhanced (suppressed) for low (high) transparent barrier. When the length of DN is larger than that of localization length, tunneling conductance obtained by numerical simulation deviates from that by QC theory. (C) 2003 Elsevier B.V. All rights reserved.
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页码:249 / 253
页数:5
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