Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B Substrate

被引：4
|
作者：
Akahane, Kouichi [1 ]
Matsumoto, Atsushi [1 ]
Umezawa, Toshimasa [1 ]
Yamamoto, Naokatsu [1 ]
机构：
[1] Natl Inst Informat & Commun Technol NICT, 4-2-1 Nukuikitamachi, Koganei, Tokyo 1848795, Japan
来源：
CRYSTALS | 2020年 / 10卷 / 02期
基金：
日本科学技术振兴机构;
关键词：
nanostructures; diffusion; desorption; atomic force microscopy; molecular beam epitaxy; semiconducting III-V materials; INAS; GROWTH; TEMPERATURE; INP; SURFACE;
D O I：
10.3390/cryst10020090
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Herein, we report on our investigation of a fabrication scheme for self-assembled quantum dots (QDs), which is another type of Stranski-Krastanow (S-K) growth mode. The In(P)As QD structure was formed by the irradiation of As flux on an InP(311)B surface in a molecular beam epitaxy system controlled by substrate temperature and irradiation duration. These QDs show photoluminescence at around 1500 nm, which is suitable for fiber optic communication systems. The QDs formed by this structure had high As composition because they had size, density, and emission wavelength similar to those of QDs grown by the usual S-K growth mode.
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页数：9
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