REALIZATION OF SILICON CARBIDE MIS CAPACITORS WITH HIGH-K AND HIGH-K STACK DIELECTRIC

Silicon carbide MIS capacitors with high dielectric constant material and its stack has been designed and characterized using TCAD Sentaurus tools. Interface dipole theory on metal-dielectric interface has been used to determine the work function of gate metal on different dielectric materials. It has been found that in single dielectric with high-K material Si3N4 exhibit better electrical characteristics with fixed oxide charges and interface state density of -3.06 x 10(12) / cm(2) and 2.9 x 10(12) / cm(2) eV respectively. In high-K stack dielectric, extracted fixed oxide charges is found to be lowest in Si3N4-SiO2 stack while HfO2-SiO2 stack exhibit lowest interface state density of 3.0 x 10(12) / cm(2) eV. Gate current density of stack dielectric at high electric field is compared with SiO2 and is found to be lowest in ZrO2-SiO2 stack dielectric.