Defect characterization in plastically deformed gallium arsenide

被引：0
|
作者：
Leipner, HS
Hubner, C
Storbeck, O
Polity, A
KrauseRehberg, R
机构：
来源：
SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96) | 1996年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior studied.
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页码：283 / 286
页数：4
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