Metalorganic chemical vapor deposition (MOCVD) of aluminum and gallium nitride thin films

被引：0

作者：

Economou, DJ ^{[1
]}

Hoffman, DM ^{[1
]}

Rangarajan, SR ^{[1
]}

Athavale, SD ^{[1
]}

Liu, JR ^{[1
]}

Zheng, ZS ^{[1
]}

Chu, WK ^{[1
]}

机构：

[1] UNIV HOUSTON,HOUSTON,TX 77204

来源：

PROCEEDINGS OF THE FIRST SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES | 1996年 / 96卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：69 / 75

页数：7

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