Metalorganic chemical vapor deposition (MOCVD) of aluminum and gallium nitride thin films

被引：0
|
作者：
Economou, DJ [1 ]
Hoffman, DM [1 ]
Rangarajan, SR [1 ]
Athavale, SD [1 ]
Liu, JR [1 ]
Zheng, ZS [1 ]
Chu, WK [1 ]
机构：
[1] UNIV HOUSTON,HOUSTON,TX 77204
来源：
PROCEEDINGS OF THE FIRST SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES | 1996年 / 96卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：69 / 75
页数：7
相关论文
共 50 条
  • [1] Chemical vapor deposition of aluminum and gallium nitride thin films from metalorganic precursors
    Hoffman, DM
    Rangarajan, SP
    Athavale, SD
    Economou, DJ
    Liu, JR
    Zheng, ZS
    Chu, WK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (02): : 306 - 311
  • [2] A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
    Washiyama, Shun
    Reddy, Pramod
    Kaess, Felix
    Kirste, Ronny
    Mita, Seiji
    Collazo, Ramon
    Sitar, Zlatko
    JOURNAL OF APPLIED PHYSICS, 2018, 124 (11)
  • [3] Pendeo-epitaxy™ process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition
    Gehrke, T
    Lenthicum, KJ
    Rajagopal, P
    Preble, EA
    Carlson, EP
    Robin, BM
    Davis, RF
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1491 - 1494
  • [4] Pendeo-epitaxyTM process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition
    Gehrke, Thomas
    Linthicum, K.J.
    Rajagopal, Pradeep
    Preble, Edward A.
    Carlson, Eric P.
    Robin, Brian M.
    Davis, Robert F.
    Materials Science Forum, 2000, 338
  • [5] Optimization of Gallium Nitride Metalorganic Chemical Vapor Deposition Process
    George, Pradeep
    Meng, Jiandong
    Jaluria, Yogesh
    JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 2015, 137 (06):
  • [6] Deposition of Gallium Nitride Thin Films by MOCVD in Microwave Plasma
    Noritaka Ihashi
    Ken-ichi Itoh
    Osamu Matsumoto
    Plasma Chemistry and Plasma Processing, 1997, 17 : 453 - 465
  • [7] Deposition of gallium nitride thin films by MOCVD in microwave plasma
    Ihashi, N
    Itoh, K
    Matsumoto, O
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 1997, 17 (04) : 453 - 465
  • [8] Metalorganic chemical vapor deposition (MOCVD) of aluminum from dimethylethylaminealane (DMEAA)
    Kim, BY
    Rhee, SW
    PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 794 - 799
  • [9] Metalorganic chemical vapor deposition of aluminum nitride on vertical surfaces
    Osterlund, Elmeri
    Suihkonen, Sami
    Ross, Glenn
    Torkkeli, Altti
    Kuisma, Heikki
    Paulasto-Krockel, Mervi
    JOURNAL OF CRYSTAL GROWTH, 2020, 531
  • [10] Metalorganic chemical vapor deposition of aluminum oxide on silicon nitride
    Dasgupta, A
    Chowdhuri, AR
    Takoudis, CG
    STRUCTURE-PROPERTY RELATIONSHIPS OF OXIDE SURFACES AND INTERFACES II, 2003, 751 : 133 - 138
12345