Electrodeless characterization of memorized states of MFIS structure by photoreflectance spectroscopy

被引：0
|
作者：
Sohgawa, M [1 ]
Yoshida, M
Kanashima, T
Okuyama, M
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Dept Syst Innovat, Div Adv Elect & Opt Sci, Toyonaka, Osaka 5608531, Japan
[2] Wakayama Natl Coll Technol, Dept Elect Engn, Wakayama 6440023, Japan
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2005年 / 46卷 / 01期
关键词：
photoreflectance spectroscopy; MFIS structure; SrBi2Ta2O9; surface potential; characterization without electrode;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
SrBi2Ta2O9 (SBT)/SiO2/Si structures have been characterized by photoreflectance spectroscopy (PRS) without electrode formation. SBT film was deposited on SiO2/n-Si by the metal-organic decomposition (MOD) method and annealed in O-2 atmosphere at 600degreesC. The voltage was applied by attaching ITO transparent electrodes during PRS measurement. The PRS spectral intensity of SBT/SiO2/Si structure has hysteresis characteristics as well as a C-V curve. Additionally, the spectral intensity gradually decreases with time, in a similar way to reduction of the capacitance. These results mean that the spectral intensity indicates the ferroelectricity of SBT film in SBT/SiO2/Si structure, so that it is considered that characterization of MFIS structure without electrode can be measured by PRS.
引用
收藏
页码：262 / 264
页数：3
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