A low-noise CMOS distributed amplifier for ultra-wide-band, applications

被引:56
|
作者
Moez, Kambiz [1 ,2 ]
Elmasry, Mohamed I. [1 ]
机构
[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
[2] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G2V4, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
CMOS integrated circuits; distributed amplifiers (DAs); noise; ultra-wide-band (UWB);
D O I
10.1109/TCSII.2007.910968
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To employ the distributed amplification technique for the design of ultra-wide-band low-noise amplifiers, the poor noise performance of the conventional distributed amplifiers (DAs) needs to be improved. In this work, the terminating resistor of the gate transmission line, a main contributor to the overall DA's noise figure, is replaced with a resistive-inductive network. The proposed terminating network creates an intentional mismatch to reduce the noise contribution of the terminating network. The degraded input matching at low frequencies can be tolerated for ultra-Aide-band applications as they need to operate above 3 GHz. Implemented in a 0.13-mu m CMOS process, the proposed DA achieves a flat gain of 12 dB with an average noise figure of 3.3 dB over the 3- to 9.4-GHz band, the best reported noise performance for a CMOS DA in the literature. The amplifier dissipates 30 mW from two 0.6-V and 1-V dc power supplies.
引用
收藏
页码:126 / 130
页数:5
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