Incompressible pore effect on the mechanical behavior of low-K dielectric films

被引:0
|
作者
Volinsky, AA [1 ]
Palacio, MLB [1 ]
Gerberich, WW [1 ]
机构
[1] Motorola DigitalDNATM Labs, Proc & Mat Characterizat Lab, Tempe, AZ 85283 USA
关键词
D O I
暂无
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
New Low-K dielectric constant materials development is underway. Introducing porosity is one of the ways to lower the dielectric constant. Those are typically spin coated organic filled glasses. The pore size is on the order of a several nanometers and pore introduction compromises mechanical properties of low-K thin films, especially fracture toughness, as these materials are typically brittle. In our previous studies we have evaluated different low-K dielectric constant materials in terms of their mechanical properties using nanoindentation. It was interesting to see that for a large range of various porous low-K materials the modulus-to-hardness ratio was constant. It was also found that the indenter contact is mostly elastic, as the loading and unloading portions of the load-displacement curve did not show any hysteresis, following indentation depth to the 3/2 power load dependence, Based on these results current analysis explains the observed constant modulus-to-hardness ratio. The paper also describes the "incompressible" pore effect. As a particle gets smaller, the yield stress increases due to the Hall-Petch effect, but for the nanometer-size particles there are also high surface energy contributions that prevent is from deforming plastically. The same approach can be applied for a nanometer size pore elastic deformation, thus we call it an "incompressible" pore concept.
引用
收藏
页码:567 / 572
页数:6
相关论文
共 50 条
  • [41] Control of pore structures in periodic porous silica low-k films
    Hata, N
    Negoro, C
    Yamada, K
    Kikkawa, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4A): : 1323 - 1326
  • [42] Low-k dielectric materials
    Shamiryan, D.
    Abell, T.
    Iacopi, F.
    Maex, K.
    MATERIALS TODAY, 2004, 7 (01) : 34 - 39
  • [43] Advanced metrology for rapid characterization of the thermal mechanical properties of low-k dielectric and copper thin films
    Lau, SH
    Tolentino, E
    Lim, Y
    Tolentino, E
    Koo, A
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (04) : 299 - 303
  • [44] Investigation of mechanical properties of black diamond™ (low-K) thin films for Cu/low-k interconnect applications
    Sekbar, V. N.
    Balakumar, S.
    Chai, T. C.
    Tay, Andrew A. O.
    EPTC 2006: 8TH ELECTRONIC PACKAGING TECHNOLOGY CONFERENCE, VOLS 1 AND 2, 2006, : 63 - 69
  • [45] Advanced metrology for rapid characterization of the thermal mechanical properties of low-k dielectric and copper thin films
    S. H. Lau
    Ellie Tolentino
    Yuen Lim
    Evangeline Tolentino
    Ann Koo
    Journal of Electronic Materials, 2001, 30 : 299 - 303
  • [46] Adhesion of Cu and low-k dielectric thin films with tungsten carbide
    A. M. Lemonds
    K. Kershen
    J. Bennett
    K. Pfeifer
    Y. M. Sun
    J. M. White
    J. G. Ekerdt
    Journal of Materials Research, 2002, 17 : 1320 - 1328
  • [47] Effect of CH4-doping on configuration and dielectric properties of SiCOH low-k films
    Yu, XZ
    Wang, TT
    Ye, C
    Ning, ZY
    ACTA PHYSICA SINICA, 2005, 54 (11) : 5417 - 5421
  • [48] Non-destructive characterisation of porous low-k dielectric films
    Baklanov, MR
    Mogilnikov, KP
    MICROELECTRONIC ENGINEERING, 2002, 64 (1-4) : 335 - 349
  • [49] Constraint effects on cohesive failures in low-k dielectric thin films
    Tsui, TY
    McKerrow, AJ
    Vlassak, JJ
    MATERIALS, TECHNOLOGY AND RELIABILITY OF ADVANCED INTERCONNECTS-2005, 2005, 863 : 3 - 10
  • [50] Elastic properties of porous low-k dielectric nano-films
    Zhou, W.
    Bailey, S.
    Sooryakumar, R.
    King, S.
    Xu, G.
    Mays, E.
    Ege, C.
    Bielefeld, J.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (04)