Fabrication of triode field emission display using metal-gate-plate

被引：0
|
作者：
Yang, G. W. [2 ]
Chen, Jun [1 ]
Huang, J. X. [2 ]
Deng, S. Z. [2 ]
She, J. C. [2 ]
Xu, N. S. [2 ]
机构：
[1] Sun Yat Sen Zhongshan Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Sun Yat Sen Zhongshan Univ, Sch Phys & Engn, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE | 2007年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：117 / +
页数：2
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