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- [2] A 13dBm 25.7% PAE 25.3-dB Gain E-Band Power Amplifier In 40nm CMOS Technology IEICE ELECTRONICS EXPRESS, 2023,
- [3] A 13 dBm 25.7% PAE 25.3-dB gain E-band power amplifier in 40 nm CMOS technology IEICE ELECTRONICS EXPRESS, 2023, 21 (02):
- [4] A Ka-band 23dBm power amplifier based on 4-way parallel-series power combiner with loaded capacitors in 65-nm CMOS IEICE ELECTRONICS EXPRESS, 2021, 18 (11):
- [5] E-band Transformer-based Doherty Power Amplifier in 40 nm CMOS 2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2014, : 167 - 170
- [6] A 29-dBm, 34% PAE E-Band Dual-Input Doherty Power Amplifier Using 40-nm GaN Technology 2022 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2022, : 156 - 159
- [8] A 28GHz Current-mode Outphasing Power Amplifier with 23.3dBm Psat and 44.2% PAE in 40nm CMOS 2022 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS, APCCAS, 2022, : 565 - 568
- [9] A 57-64 GHz Two-Way Parallel-Combined Power Amplifier with 16.6 dBm Psat and 23.6% Peak PAE in 40nm Bulk CMOS 2022 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT 2022), 2022, : 177 - 180