High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition

被引：23
|
作者：
Ratcliff, C. [1 ]
Grassman, T. J. [1 ,2 ]
Carlin, J. A. [2 ]
Ringel, S. A. [1 ,2 ]
机构：
[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[2] Ohio State Univ, Inst Mat Res, Columbus, OH 43210 USA
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 14期
关键词：
atomic force microscopy; gallium compounds; high-temperature effects; III-V semiconductors; MOCVD; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; surface morphology;
D O I：
10.1063/1.3644956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Post-growth surface morphologies of high-temperature homoepitaxial GaP films grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have been studied. Smooth, stepped surface morphologies of MBE-grown layers, measured by atomic force microscopy, were found for a wide range of substrate temperatures and P-2:Ga flux ratios. A MOCVD-based growth study performed under similar conditions to MBE-grown samples shows a nearly identical smooth, step-flow surface morphology, presenting a convergence of growth conditions for the two different methods. The additional understanding of GaP epitaxy gained from this study will impact its use in applications that include GaP-based device technologies, III-V metamorphic buffers, and III-V materials integration with silicon. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3644956]
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Step-flow growth of InN on N-polarity GaN template by molecular beam epitaxy with a growth rate of 1.3 μm/h
    Xu, K
    Terashima, W
    Hata, T
    Hashimoto, N
    Ishitani, Y
    Yoshikawa, A
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 377 - 381
  • [32] ANISOTROPIC RIDGE GROWTH BY STEP-FLOW-MODE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING DIETHYLGALLIUMCHLORIDE
    YAMAGUCHI, K
    OKAMOTO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (11A): : 4885 - 4888
  • [33] Growth of high quality InGaN films by metalorganic chemical vapor deposition
    Roberts, JC
    McIntosh, FG
    Boutros, KS
    Bedair, SM
    Moussa, M
    Piner, EL
    He, Y
    ElMasry, NA
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 273 - 278
  • [34] A kinetic model for step flow growth in molecular beam epitaxy
    Balykov, Lev
    Voigt, Axel
    SURFACE SCIENCE, 2006, 600 (17) : 3436 - 3445
  • [35] Growth of high nitrogen content GaAsN by metalorganic chemical vapor deposition
    Roberts, JC
    Moody, BF
    Barletta, P
    Aumer, ME
    LeBoeuf, SF
    Luther, JM
    Bedair, SM
    PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 2002, 692 : 29 - 34
  • [36] SELECTIVE AREA GROWTH OF INDIUM-PHOSPHIDE BASED HETEROSTRUCTURES BY METALORGANIC MOLECULAR-BEAM EPITAXY
    ANDREWS, DA
    REJMANGREENE, MAZ
    WAKEFIELD, B
    DAVIES, GJ
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 167 - 170
  • [37] Strong affinity of hydrogen for the GaN(000-1) surface: Implications for molecular beam epitaxy and metalorganic chemical vapor deposition
    Northrup, JE
    Neugebauer, J
    APPLIED PHYSICS LETTERS, 2004, 85 (16) : 3429 - 3431
  • [38] Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy
    Olego, D.J.
    Tamura, M.
    Okuno, Y.
    Kawano, T.
    Hashimoto, A.
    1600, (71):
  • [39] Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source
    Hsu, YJ
    Hong, LS
    Huang, KF
    Tsay, JE
    THIN SOLID FILMS, 2002, 419 (1-2) : 33 - 39
  • [40] MOLECULAR SELF-ASSEMBLY IN GALLIUM-ARSENIDE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    HICKS, RF
    GEE, PE
    QI, H
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 207 : 83 - COLL
12345