High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition

被引：23
|
作者：
Ratcliff, C. [1 ]
Grassman, T. J. [1 ,2 ]
Carlin, J. A. [2 ]
Ringel, S. A. [1 ,2 ]
机构：
[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[2] Ohio State Univ, Inst Mat Res, Columbus, OH 43210 USA
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 14期
关键词：
atomic force microscopy; gallium compounds; high-temperature effects; III-V semiconductors; MOCVD; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; surface morphology;
D O I：
10.1063/1.3644956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Post-growth surface morphologies of high-temperature homoepitaxial GaP films grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have been studied. Smooth, stepped surface morphologies of MBE-grown layers, measured by atomic force microscopy, were found for a wide range of substrate temperatures and P-2:Ga flux ratios. A MOCVD-based growth study performed under similar conditions to MBE-grown samples shows a nearly identical smooth, step-flow surface morphology, presenting a convergence of growth conditions for the two different methods. The additional understanding of GaP epitaxy gained from this study will impact its use in applications that include GaP-based device technologies, III-V metamorphic buffers, and III-V materials integration with silicon. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3644956]
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页数：3
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