Characteristics of spin-valve films with non-magnetic oxide layers for specular-scattering

被引：9

作者：

Mizuguchi, T ^{[1
]}

Kano, H ^{[1
]}

机构：

[1] Sony Corp, Yokohama Res Ctr, Hodogaya Ku, Yokohama, Kanagawa 2400036, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2001年 / 37卷 / 04期

关键词：

GMR; oxide layer; specular scattering; spin-valve;

D O I：

10.1109/20.950955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We found a new spin-valve structure in which low coercivity coexists with high GMR ratio is substrate/Ta/NiFe/PtMn/CoFe/Ru/Ox/CoFe/Cu/CoFe/Cu/Ta-O.. "Ox" means that Ru layer surface was exposed to oxygen gas. In this structure, the free layer is separated from the top specular layer by a copper layer and shows no increase in coercivity. Furthermore, the free layer was well oriented due to the thin oxide layer in the bottom pinned layer and the coercivity did not increase. After annealing at 295 degreesC, GMR and the exchange-bias field showed little change, which meant the oxide layers were stable. For the structure glass/Ta [3 nm]/NiFe [2 nm]/PtMn [10 mn]/CoFe [1.5nm]/Ru [0.8 mn]/Ox/CoFe [2 mn]/Cu [2 mn]/CoFe [2 nm]/Cu [1 mn]/Ta-O [1 nm], GMR ratio of 14.9% and change in sheet resistance of 3.3 ohms were obtained. The coercivity of the free layer exhibited 0.4 Oe.

引用

页码：1742 / 1744

页数：3

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