A two-dimensional fluid model is developed to simulate the one-dimensional self-organized patterns in an atmospheric-pressure dielectric barrier discharge (DBD) driven by sinusoidal voltage in argon. Under certain conditions, by changing applied voltage amplitude, the transversely uniform discharge can evolve into the patterned discharge and the varied self-organized patterned discharges with different numbers and arrangements of discharge channels can be observed. Similar to the uniform atmospheric-pressure DBD, the patterned discharge mode is found to undergo a transition from Townsend regime, sub-glow regime to glow regime with increasing applied voltage amplitude. In the different regimes, charged particles and electric field display different dynamical behaviors. If the voltage amplitude is increased over a certain value, the discharge enters an asymmetric patterned discharge mode, and then transforms into the spatially chaotic state with out-of-order discharge channels. The reason for forming the one-dimensional self-organized pattern is mainly due to the so-called activation-inhibition effect resulting from the local high electron density region appearing in discharge space. Electrode arrangement is the reason that induces local high electron density. (C) 2015 AIP Publishing LLC.
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Kanazawa Institute of Technology, Ishikawa 921-8501, 7-1, Ohgigaoka, NonoichiKanazawa Institute of Technology, Ishikawa 921-8501, 7-1, Ohgigaoka, Nonoichi
Yoshioka Y.
Hanaoka R.
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Kanazawa Institute of Technology, Ishikawa 921-8501, 7-1, Ohgigaoka, NonoichiKanazawa Institute of Technology, Ishikawa 921-8501, 7-1, Ohgigaoka, Nonoichi
Hanaoka R.
Mochizuki Y.
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Sanmei Electronics Co., Ltd., Shimizu-ku, Shizuoka 424-0924, 2-2-1, SeikaiKanazawa Institute of Technology, Ishikawa 921-8501, 7-1, Ohgigaoka, Nonoichi
Mochizuki Y.
Kobayashi Y.
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Nihon Softec Inc., Nanto 939-1504, 888-2, KawayokeshinKanazawa Institute of Technology, Ishikawa 921-8501, 7-1, Ohgigaoka, Nonoichi
Kobayashi Y.
Yamada Y.
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Takano Giken Co., Ltd., Toyama 939-2375Kanazawa Institute of Technology, Ishikawa 921-8501, 7-1, Ohgigaoka, Nonoichi