InAlAs/InGaAs/InP field effect transistor with carbon-doped InAlAs buffer layers

InGaAs/InP composite channel transistors have potential applications in high speed optoelectronic integrated circuits due to their dynamic and DC performances [1] [2]. Indeed, the high mobility of InGaAs combined with the high breakdown field and high electron velocity of InP are favorable parameters to obtain high cutoff frequency and low leakage current, and so, make it a good candidate for such application. In this paper we investigate MOVPE structures, in particular HFETs on InAlAs buffer layers, and the influence of the InGaAs channel parameters -thickness and doping- on both gate leakage current and breakdown voltage. Furthermore, the reverse doped structure has been optimized for highest Hall mobility.