{1-x SrBi2Ta2O9-x Bi3TiTaO9} Materials:: structural behavior and ferroelectric response

被引：4
|
作者：
Melgarejo, RE
Tomar, MS [1 ]
Dobal, PS
Filippov, SK
Katiyar, RS
Kuenhold, KA
机构：
[1] Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USA
[2] Univ Puerto Rico, Dept Phys, Rio Piedras, PR 00931 USA
[3] Univ Tulsa, Dept Engn Phys, Tulsa, OK 74104 USA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 83卷 / 1-3期
基金：
美国国家科学基金会;
关键词：
aurivillius phase materials; synthesis; thin films; ferroelectric memory;
D O I：
10.1016/S0921-5107(01)00501-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ferroelectric memory was observed in {1-x SrBi2Ta2O9-x Bi3TiTaO9} material for the composition x = 0.3. Thus, there is interest in the investigation of detailed properties of this material system. We report on the structural and electrical properties of this material system using X-ray diffraction. Raman spectroscopy, impedance spectroscopy. and ferroelectric measurements. These studies suggest that high quality powder and thin films could be prepared for all compositions by a chemical solution route at the temperature ranging from 650 to 750 degreesC. Ferroelectric response was also observed in thin film (for x = 0.5) and pellet (for x = 0.0) samples. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：89 / 96
页数：8
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