Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes

被引：0
|
作者：
Arkani, Reza [1 ,2 ]
Broderick, Christopher A. [1 ,2 ]
O'Reilly, Eoin P. [1 ,2 ]
机构：
[1] Tyndall Natl Inst, Cork T12 R5CP, Ireland
[2] Univ Coll Cork, Dept Phys, Cork T12 YN60, Ireland
来源：
2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2018年
基金：
爱尔兰科学基金会;
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present a theoretical investigation of the optical properties of metamorphic InNy(As1-xSbx)(1-y)/AlzIn1-zAs type-I quantum wells (QWs) designed to emit at mid-infrared wavelengths. The use of AlzIn1-zAs metamorphic buffer layers has recently been demonstrated to enable growth of lattice-mismatched InAs1-xSbx QWs having emission wavelengths greater than or similar to 3 mu m on GaAs substrates. However, little information is available regarding the properties of this newly established platform. We undertake a theoretical analysis and optimisation of the properties and performance of strain-balanced structures designed to emit at 3.3 and 4.2 mu m, where we recommend the incorporation of dilute concentrations of nitrogen (N) to achieve emission beyond 4 mu m. We quantify the calculated trends in the optical properties, as well as the ability to engineer and optimise the overall QW performance. Our results highlight the potential of metamorphic InNy(As1-xSbx)(1-y)/AlzIn1-zAs QWs for the development of mid-infrared light-emitting diodes, and provide guidelines for the growth of optimised structures.
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页数：4
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