Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films

被引:41
|
作者
Marincel, Daniel M. [1 ,2 ]
Zhang, Huairuo [3 ]
Jesse, Stephen [4 ]
Belianinov, Alex [4 ]
Okatan, Mahmut B. [4 ]
Kalinin, Sergei V. [4 ]
Rainforth, W. Mark [3 ]
Reaney, Ian M. [3 ]
Randall, Clive A. [1 ,2 ]
Trolier-McKinstry, Susan [1 ,2 ]
机构
[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
[3] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S1 3JD, S Yorkshire, England
[4] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
基金
英国工程与自然科学研究理事会; 美国国家科学基金会;
关键词
BARIUM-TITANATE; ORIENTATION DEPENDENCE; ELECTRICAL-PROPERTIES; CRYSTAL ORIENTATION; SINGLE-CRYSTALS; X-RAY; BEHAVIOR; ENERGY; SIZE; TRANSFORMATION;
D O I
10.1111/jace.13535
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Domain wall movement at and near engineered 10 degrees, 15 degrees, and 24 degrees tilt and 10 degrees and 30 degrees twist grain boundaries was measured by band excitation piezoresponse force microscopy for Pb(Zr,Ti)O-3 films with Zr/Ti ratio of 45/55 and 52/48. A minimum in nonlinear response was observed at the grain boundary for the highest angle twist and tilt grain boundaries, while a maximum in nonlinear response was observed at the 10 degrees tilt grain boundaries. The observed nonlinear response was correlated with the domain configurations imaged in cross section by transmission electron microscopy.
引用
收藏
页码:1848 / 1857
页数:10
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