Cu-Sn based die attach material for power semiconductor with stress control

被引：0

作者：

Ikeda, Hiroaki ^{[1
]}

Sekine, Shigenobu ^{[1
]}

Kimura, Ryuji ^{[1
]}

Shimokawa, Koichi ^{[1
]}

Okada, Keiji ^{[1
]}

Shindo, Hiroaki ^{[1
]}

Ooi, Tatsuya ^{[1
]}

Tamaki, Rei ^{[1
]}

机构：

[1] Napra Corp, Katsushika Ku, Tokyo 1240013, Japan

来源：

2018 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING AND IMAPS ALL ASIA CONFERENCE (ICEP-IAAC) | 2018年

关键词：

Joint material; power semiconductor; Intermetallic Compound; IMC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes development of joint materials using only base metals (Cu and Sn) for power semiconductor assembly. The preform sheet of the joint material is made by two kinds of particles such as Cu source and Cu-Sn IMC source. Optimized ratio of Cu source: IMC source provides robust skeleton structure in joint area. The particles' mixture control (Cu density and thickness) affects stress control to eliminate cracks and delamination of the joint area. As evaluation, Thermal Cycling Test (TCT, -40 degrees C similar to+200 degrees C, 1,000cycles) of Cu-Cu joint resulted no critical cracks / delamination / voids. We confirmed the material also applicable for attaching SiC die on the DCB substrate on bare Cu heatsink.

引用

页码：381 / 386

页数：6

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