A comparative study of sodium hypophosphite and phosphorous acid on the Ferrous Tungsten Phosphorous thin films

被引:0
|
作者
Thangaraj, N. [1 ]
Tamilarasan, K. [2 ]
Sasikumar, D. [1 ]
机构
[1] Velalar Coll Engn & Technol, Dept Phys, Erode 638012, India
[2] Kongu Engn Coll, Dept Phys, Perundurai 638052, India
来源
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2015年 / 17卷 / 5-6期
关键词
Electrodeposition; Fe-W-P; EDAX; SEM; XRD; Hardness; ALLOYS;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetic film of Ferrous Tungsten Phosphorous (Fe-W-P) were prepared with NaH2PO2 and H3PO3 by electrodeposition method for current density of 30 mA cm(-2) and 45 minutes deposition time. The magnetic saturation (M-s), retentivity (M-r) and coercivity (H-c) of the films were studied using vibrating sample magnetometer. The retentivity (M-r) and the magnetic saturation (M-s) of the deposited films increased with the increase of organic additive. The crystallite size and stress of the deposited thin films were calculated using X-ray diffraction (XRD) studies. Percentages of elemental analysis of Fe-W-P films were obtained using energy dispersive X-ray analysis (EDAX). Surface morphology analysis was carried out using scanning electron microscope (SEM). The magnetic properties and structural characteristics of Fe-W-P thin films with NaH2PO2 and Fe-W-P thin films with H3PO3 are discussed.
引用
收藏
页码:597 / 601
页数:5
相关论文
共 50 条
  • [21] Plasma properties during magnetron sputtering of lithium phosphorous oxynitride thin films
    Christiansen, Ane S.
    Stamate, Eugen
    Thyden, Karl
    Younesi, Reza
    Holtappels, Peter
    JOURNAL OF POWER SOURCES, 2015, 273 : 863 - 872
  • [22] Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing
    Tseng, CH
    Lin, CW
    Teng, TH
    Chang, TK
    Cheng, HC
    Chin, A
    SOLID-STATE ELECTRONICS, 2002, 46 (08) : 1085 - 1090
  • [23] Exploration of magnetron sputtering technics for preparing high-phosphorous-doped p-type ZnO thin films via phosphorous diffusion
    Ding, Rui-Qin
    Zeng, Qing-Guang
    Chen, Yi-Zhan
    Zhu, Hui-Qun
    Ding, Xiao-Gui
    Qi, De-Bei
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2010, 39 (02): : 490 - 493
  • [24] Effect of current density on electrodeposited ferrous tungsten thin films
    Thangaraj, N.
    Tamilarasan, K.
    Sasikumar, D.
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2014, 52 (06) : 395 - 398
  • [25] CONTRIBUTION TO STUDY OF MECHANISM OF STABILIZING ACTION OF ESTERS OF PHOSPHOROUS ACID
    RYSAVY, D
    SLAMA, Z
    ANGEWANDTE MAKROMOLEKULARE CHEMIE, 1969, 9 (DEC): : 129 - &
  • [26] Influence of phosphorous acid on electrodeposition of cobalt in pores of porous anodic films of aluminum
    Li, LC
    JOURNAL OF MATERIALS SCIENCE LETTERS, 2001, 20 (15) : 1459 - 1461
  • [27] Hall effect study of YBCO HTS films implanted with phosphorous ions
    Kato, H
    Kulpa, A
    Wong, A
    Hui, D
    Jaeger, NAF
    Carolan, JF
    Hardy, WN
    Ma, QY
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1997, 7 (02) : 1616 - 1619
  • [28] Defect study of phosphorous doped a-Si:H thin films using cathodoluminescence, IR and Raman spectroscopy
    Singh, Chandra Bhal
    Bhattacharya, Sekhar
    Patel, Uday Singh
    Singh, Vandana
    Bhargav, P. Balaji
    Ahmed, Nafis
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2023, 605
  • [29] Amorphous structures and kinetics of phosphorous incorporation in electrodeposited Ni-P thin films
    Saitou, M
    Okudaira, Y
    Oshikawa, W
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (03) : C140 - C143
  • [30] Silicon-hydrogen bonds in boron and phosphorous doped polycrystalline silicon thin films
    Saleh, R
    Nickel, NH
    AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, 2004, 808 : 289 - 294