AlGaN-based solar-blind metal-semiconductor-metal photodetectors

被引：0

作者：

Shao Huimin ^{[1
]}

Zhang Shilin ^{[1
]}

Xie Sheng ^{[1
]}

Mao Luhong ^{[1
]}

Guo WeiLian ^{[1
]}

Li Xianjie

Yin Shunzheng ^{[2
]}

Feng Zhihong ^{[2
]}

Liu Bo ^{[2
]}

机构：

[1] Tianjin Univ, Sch Elect & Informat Engineer, Tianjin 300072, Peoples R China

[2] 13th Inst China Elect Technol Grp Corp, Shijiazhuang 050051, Peoples R China

来源：

2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2011年

基金：

中国国家自然科学基金;

关键词：

AlGaN; Solar-blind; Spectral Responsivity; Ultraviolet photodetector;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We reported on the fabrication and characterization of AlGaN metal-semiconductor-metal (MSM) photodetectors (PDs). AlGaN epitaxial material with an Al content of 0.6 were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). Schottky contacts were made with Ni/Pt/Au by the way of standard lift-off technique. We measured the performance of PDs. The cutoff wavelength is 276nm. Ultraviolet/visible contrast is about 3 orders of magnitude. The dark current is about 1nA at 1.5V bias and 1 mu A at 5.3V bias.

引用

页数：2

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