A new triggering mode in a vertical bi-directional MOS-thyristor device

被引：3
|
作者：
Bourennane, A [1 ]
Breil, M [1 ]
Sanchez, JL [1 ]
Austin, P [1 ]
Jalade, J [1 ]
机构：
[1] CNRS, LAAS, F-31077 Toulouse 4, France
来源：
MICROELECTRONICS JOURNAL | 2004年 / 35卷 / 03期
关键词：
power semiconductor devices; bi-directionality; triac; AC switch; association MOS-thyristor;
D O I：
10.1016/S0026-2692(03)00189-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new mode of triggering in a bi-directional MOS-thyristor device is described and its operating modes are verified using 2D numerical simulations. This device is a vertical MOS controlled bi-directional structure that can be used as an AC switch for mains applications. It uses a P+ wall that extends from the top surface to the bottom of the wafer and ensures, in addition to blocking anode voltages, the turn-on of the device in the third quadrant of operation by using a lateral IGBT. This device has the advantage of being controlled by MOS and it requires a technological process fully compatible with that of the IGBT for its realization. Moreover, a description of most of the proposed devices to be used as AC switches is given in this paper in order to highlight the major difficulties encountered in designing MOS-gated bi-directional switches. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：277 / 285
页数：9
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