InP-based VCSELs in the 1.4 to 2 μm wavelength range for optical communication and absorption spectroscopy

被引：0
|
作者：
Ortsiefer, M [1 ]
Shan, P [1 ]
Rosskopf, J [1 ]
Fürfanger, M [1 ]
Amann, MC [1 ]
Lauer, C [1 ]
Maute, M [1 ]
Böhm, G [1 ]
Lackner, M [1 ]
Winter, F [1 ]
机构：
[1] VERTILAS GmbH, D-85748 Garching, Germany
来源：
2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
With the buried tunnel junctions technology a breakthrough in the dynamic and stationary lasing performance has-been achieved for long-wavelength InP-based VCSELs making these lasers ideally suited for broadband communications and gas sensing applications.
引用
收藏
页码：505 / 506
页数：2
相关论文
共 50 条
  • [31] 2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits
    Wang, Ruijun
    Sprengel, Stephan
    Muneeb, Muhammad
    Boehm, Gerhard
    Baets, Roel
    Amann, Markus-Christian
    Roelkens, Gunther
    OPTICS EXPRESS, 2015, 23 (20): : 26834 - 26841
  • [32] 1.55 μm m InP-based Short-Cavity-VCSELs with Enhanced Modulation-Bandwidth of 15 GHz
    Mueller, M.
    Hofmann, W.
    Boehm, G.
    Rosskopf, J.
    Roenneberg, E.
    Ortsiefer, M.
    Amann, M. C.
    2009 35TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC), 2009,
  • [33] High performance InP-based phototransistors for long wavelength, HBT-based optical receivers
    Frimel, SM
    Roenker, KP
    Stanchina, WE
    Sun, HC
    GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998, 1998, : 161 - 164
  • [34] Temperature and wavelength dependence of recombination processes in 1.5μm InGaAlAs/InP-based lasers
    Sweeney, SJ
    McConville, D
    Jin, SR
    Ahmad, CN
    Massé, NF
    Bouyssou, RX
    Adams, AR
    Hanke, C
    2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, : 738 - 741
  • [35] InP-based 1.3/1.55 μm wavelength demultiplexer with multimode interference and chirped grating
    Lin, YJ
    Lee, SL
    OPTICAL AND QUANTUM ELECTRONICS, 2002, 34 (12) : 1201 - 1212
  • [36] Antimonide-based lasers and DFB laser diodes in the 2–2.7 μm wavelength range for absorption spectroscopy
    D. Barat
    J. Angellier
    A. Vicet
    Y. Rouillard
    L. Le Gratiet
    S. Guilet
    A. Martinez
    A. Ramdane
    Applied Physics B, 2008, 90 : 201 - 204
  • [37] InP-based 1.3/1.55 μm wavelength demultiplexer with multimode interference and chirped grating
    Y.-J. Lin
    S.-L. Lee
    Optical and Quantum Electronics, 2002, 34 : 1201 - 1212
  • [38] Wavelength modulation spectroscopy with a widely tunable InP-based 2.3 μm vertical-cavity surface-emitting laser
    Hangauer, Andreas
    Chen, Jia
    Strzoda, Rainer
    Ortsiefer, Markus
    Amann, Markus-Christian
    OPTICS LETTERS, 2008, 33 (14) : 1566 - 1568
  • [39] Energy-Efficient High-Speed InP-based 1.3 μm Short-Cavity VCSELs
    Spiga, Silvia
    Mueller, Michael
    Amann, Markus-Christian
    2013 15TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON 2013), 2013,
  • [40] InP-based 1.3 μm and 1.55 μm Short-Cavity VCSELs Suitable for Telecom- and Datacom-Applications
    Mueller, Michael
    Grasse, Christian
    Amann, Markus Christian
    2012 14TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON 2012), 2012,
12345