Regular domain structures fabricated by an electron beam in stoichiometric LiNbO3 crystals

被引:4
|
作者
Kokhanchik, L. S. [1 ]
Palatnikov, M. N. [2 ]
Shcherbina, O. B. [2 ]
机构
[1] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia
[2] Russian Acad Sci, Kola Sci Ctr, Tananaev Inst Chem & Technol Rare Elements & Mine, Apatity 184209, Murmansk Oblast, Russia
基金
俄罗斯基础研究基金会;
关键词
POLARIZATION;
D O I
10.1134/S1063783412050198
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Electron beam writing of regular domain structures in Z-cuts 0.75 mm thick of stoichiometric and close to stoichiometric LiNbO3 crystals has been carried out. Crystals have been grown by the Czochralski method from a melt with excess Li2O (58.6 mol %) and from a congruent-composition melt in the presence of 6 wt % K2O alkali solvent (flux). In both crystals, threshold charge doses required to form individual domains have been determined, and the optimal conditions of periodic structure patterning by sequential local irradiations have been found. Domain gratings of similar type (with periods of 6.5, 7, and 10 mu m) are formed in both types of stoichiometric crystals.
引用
收藏
页码:962 / 964
页数:3
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