Morphological change of semiconductor growth interface from solution in a magnetic field

In the present study, the morphological changes of a semiconductor growth interface from a solution were observed by near-infrared microscopy in rotating and static magnetic fields generated by two kinds of electromagnetic setups. The rotating magnetic setup had a maximum magnetic induction of 12 mT with a frequency of 50 Hz at the center of the furnace, The static magnetic field was produced by a single solenoid with a maximum magnetic induction of 800 mT. The growth of GaP/GaP (1 1 1) B was performed by a linear cooling method at the rate of 1 K/min under a starting growth temperature of 1173 K. The results revealed few differences in the morphological changes during growth under constant rotating magnetic fields of 0 and 12 mT. It was shown that the transverse static magnetic field of 800 mT reduced the growth rate and suppressed the appearance of macrosteps on the facet region. (C) 1999 Elsevier Science B.V. All rights reserved.