Comparison of temperature dependent electroluminescence of InGaN/GaN and AlGaInP based LEDs

被引:1
|
作者
Liang, H [1 ]
Yu, LS [1 ]
Qi, YD [1 ]
Wang, D [1 ]
Lu, ZD [1 ]
Tang, W [1 ]
Lau, KM [1 ]
Yang, CL [1 ]
Wang, JN [1 ]
Ge, WK [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM | 2003年
关键词
D O I
10.1109/COS.2003.1278201
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Light emitting spatial inhomogeneity in InGaN/GaN multiple quantum well (MQW) blue and green LEDs were observed directly with a microscope. Electroluminescence (EL) spectra of InGaN/GaN QW blue and green LEDs were studied in the temperature range of 10-300 K at an injection current of 5mA. Some anomalous behavior was observed. Intensity of the EL main peak increased monotonically with temperature from 10 to 200 K and slightly decreased with further temperature increase in the 200 K range. This is in contrast with the monotonic decrease of EL with increasing temperature for conventional AlGaInP QW red LEDs. The anomalous behavior can only be observed on InGaN/GaN systems. The origin of such behaviors was discussed using a model of quantum dot clusters in the InGaN/GaN psudo-quantum wells, with a small potential barrier at the boundary of the quantum dots.
引用
收藏
页码:196 / 199
页数:4
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